The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jan. 24, 2014
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Toshimichi Shintani, Ibaraki, JP;
Susumu Soeya, Ibaraki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A phase-change device capable of realizing a multi-level record in a superlattice phase-change memory cell in which a superlattice phase-change material is used as a recording film, and thereby achieving the reduction in power consumption and the capacity increase is provided. To a phase-change memory cell composed of GeTe/SbTesuperlattice or SnTe/SbTesuperlattice, a SET pulse is once applied to form a SET state (low resistance state). Thereafter, recording pulses having respectively different voltage values between a voltage value forming the SET state and a voltage value forming a RESET state (high resistance state) are respectively applied to the superlattice phase-change memory cell twice or more. In this manner, a read resistance (SET resistance) corresponding to a recording pulse (SET pulse) and read resistances corresponding to each of the recording pulses are obtained, so that the multi-level record can be realized.