The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Dec. 05, 2008
Chantal Arena, Mesa, AZ (US);
Christiaan J. Werkhoven, Gilbert, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Scottsdale, AZ (US);
Dennis L. Goodwin, Happy Jack, AZ (US);
Chantal Arena, Mesa, AZ (US);
Christiaan J. Werkhoven, Gilbert, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Scottsdale, AZ (US);
Dennis L. Goodwin, Happy Jack, AZ (US);
SOITEC, Bernin, FR;
Abstract
This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.