The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Sep. 13, 2011
Applicants:

Masayuki Asai, Toyama, JP;

Koichi Honda, Toyama, JP;

Mamoru Umemoto, Toyama, JP;

Kazuyuki Okuda, Toyama, JP;

Inventors:

Masayuki Asai, Toyama, JP;

Koichi Honda, Toyama, JP;

Mamoru Umemoto, Toyama, JP;

Kazuyuki Okuda, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/08 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/509 (2006.01); C23C 16/54 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/08 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/4401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45542 (2013.01); C23C 16/45544 (2013.01); C23C 16/509 (2013.01); C23C 16/54 (2013.01); H01J 37/3244 (2013.01); H01J 37/32899 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02568 (2013.01); H01L 21/0337 (2013.01); H01L 21/32051 (2013.01); H01L 21/32053 (2013.01);
Abstract

Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.


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