The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jul. 09, 2008
Applicant:
Ronghua Wei, San Antonio, TX (US);
Inventor:
Ronghua Wei, San Antonio, TX (US);
Assignee:
SOUTHWEST RESEARCH INSTITUTE, San Antonio, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/16 (2006.01); C23C 14/54 (2006.01); C23C 14/48 (2006.01); C23C 14/04 (2006.01);
U.S. Cl.
CPC ...
C23C 14/345 (2013.01); C23C 14/046 (2013.01); C23C 14/16 (2013.01); C23C 14/165 (2013.01); C23C 14/48 (2013.01); C23C 14/541 (2013.01);
Abstract
A method of sputtering a component includes positioning a conductive substrate into a vacuum chamber, wherein the conductive substrate is tubular and has a surface. A source electrode including a source material may be inserted into the conductive substrate. A first bias voltage ΔVmay be applied between the conductive substrate and the vacuum chamber and a second bias voltage ΔVmay be applied between the source electrode and the vacuum chamber, sputtering the source material onto the conductive substrate.