The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Feb. 09, 2012
Moriyoshi Kanamaru, Takasago, JP;
Yuki Iwasaki, Takasago, JP;
Minoru Matsui, Takasago, JP;
Hiroshi Goto, Takasago, JP;
Akira Nambu, Takasago, JP;
Moriyoshi Kanamaru, Takasago, JP;
Yuki Iwasaki, Takasago, JP;
Minoru Matsui, Takasago, JP;
Hiroshi Goto, Takasago, JP;
Akira Nambu, Takasago, JP;
KOBELCO RESEARCH INSTITUTE, INC., Kobe-shi, JP;
Abstract
Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100≧70. In equation (1), A represents the XRD peak intensity in the vicinity of 2θ=34°, B represents the XRD peak intensity in the vicinity of 2θ=31°, C represents the XRD peak intensity in the vicinity of 2θ=35°, and D represents the XRD peak intensity in the vicinity of 2θ=26.5°.