The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Mar. 30, 2012
Applicants:

Fang Liu, Woburn, MA (US);

Kuang L. Yang, Newton, MA (US);

Inventors:

Fang Liu, Woburn, MA (US);

Kuang L. Yang, Newton, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/26 (2006.01); G01L 9/00 (2006.01); B81B 7/00 (2006.01); G01R 29/24 (2006.01);
U.S. Cl.
CPC ...
B81B 7/008 (2013.01); B81B 2207/03 (2013.01); G01R 29/24 (2013.01);
Abstract

A method for measuring retained surface charges within a MEMS device includes performing an initial voltage sweep on the MEMS device, and recording the capacitance between a first and second electrode of the MEMS device. The method may then (1) apply a stress signal to the MEMS device that causes a first and/or second electrode within the MEMS device to retain a surface charge, and (2) perform at least one additional voltage sweep on the MEMS device. The method may record the capacitance during the additional voltage sweep(s), and calculate a C-V center voltage shift based upon the data obtained during the initial voltage sweep and additional voltage sweep. The voltage shift is representative of the retained surface charge.


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