The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Mar. 30, 2012
Applicant:
Jau-wen Chen, Cupertino, CA (US);
Inventor:
Jau-Wen Chen, Cupertino, CA (US);
Assignee:
NVIDIA Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01);
Abstract
A technique for providing electrostatic discharge (ESD) protection in complementary metal-oxide semiconductor (CMOS) technologies is disclosed. A power supply RC-based ESD protection circuit having an RC value in the nanosecond range increases the allowable power-up slew rate so that fast power-up events (e.g., hot-plug and power switching operations) are not erroneously interpreted as ESD events. Because the RC value is small, the layout area needed for the RC-based ESD protection circuit is also reduced.