The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Feb. 10, 2015
Applicant:

Quantumscape Corporation, San Jose, CA (US);

Inventors:

Cheng Chieh Chao, Santa Clara, CA (US);

Zhebo Chen, Redwood City, CA (US);

Tim Holme, Mountain View, CA (US);

Marie A. Mayer, Santa Clara, CA (US);

Gilbert N. Riley, Jr., Marlborough, MA (US);

Assignee:

QuantumScape Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/62 (2006.01); H01M 10/0562 (2010.01); H01M 4/131 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 10/0562 (2013.01); H01M 4/131 (2013.01); H01M 4/62 (2013.01); H01M 10/0525 (2013.01); H01M 2220/20 (2013.01); H01M 2220/30 (2013.01); H01M 2300/0068 (2013.01); H01M 2300/0071 (2013.01); H01M 2300/0074 (2013.01);
Abstract

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the LiMPS(LMPS) [M=Si, Ge, and/or Sn] containing material.


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