The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

May. 24, 2011
Applicants:

Ghyrn E. Loveness, East Palo Alto, CA (US);

Constantin I. Stefan, San Jose, CA (US);

Song Han, Foster City, CA (US);

Inventors:

Ghyrn E. Loveness, East Palo Alto, CA (US);

Constantin I. Stefan, San Jose, CA (US);

Song Han, Foster City, CA (US);

Assignee:

Amprius, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/04 (2006.01); H01M 4/58 (2010.01); B05D 5/12 (2006.01); H01M 4/38 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/62 (2006.01); H01M 4/66 (2006.01); H01M 4/70 (2006.01); H01M 4/75 (2006.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/38 (2013.01); H01M 4/0428 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/622 (2013.01); H01M 4/66 (2013.01); H01M 4/661 (2013.01); H01M 4/667 (2013.01); H01M 4/70 (2013.01); H01M 4/75 (2013.01); H01M 4/587 (2013.01); H01M 10/0525 (2013.01); Y02E 60/122 (2013.01); Y10T 29/49115 (2015.01);
Abstract

Provided are novel multidimensional electrode structures containing high capacity active materials for use in rechargeable electrochemical cells. These structures include main support structures and multiple nanowires attached to the support structures and extending into different directions away from these supports. The active material may be deposited as a layer (uniform or non-uniform) surrounding the nanowires and, in certain embodiments, the main supports and even substrate. The active material layer may be sufficiently thin to prevent pulverization of the layer at given operating conditions. Interconnections between the electrode structures and/or substrate may be provided by overlaps formed during deposition of the active layer. Silicide-based nano wires structures may be formed on the main supports in a fluidized bed reactor by suspending the metal-containing main supports in a silicon-containing process gas. A layer of silicon may be then deposited over these silicide nanowires.


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