The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Sep. 18, 2011
Applicant:
Avner Rothschild, Haifa, IL;
Inventor:
Avner Rothschild, Haifa, IL;
Assignee:
TECHNION RESEARCH & DEVELOPMENT FOUNDATION, Haifa, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 11/36 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); G11C 11/36 (2013.01); G11C 13/00 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); H01L 45/1253 (2013.01); G11C 13/0007 (2013.01);
Abstract
A memory cell (C), including a first non-insulator (C) and a second non-insulator (C), different from the first non-insulator. The second non-insulator forms a junction (C) with the first non-insulator. The cell further includes a first electrode (C) which is connected to the first non-insulator and a second electrode (C) which is connected to the second non-insulator. At least one of the first and second non-insulators is chosen from a group consisting of a solid electrolyte and a mixed ionic electronic conductor and has an ionic transference number less than 1 and greater than or equal to 0.5.