The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9172028 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 27, 2015

Filed:

Jan. 28, 2013
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Takahito Watanabe, Kanagawa, JP;

Shintaro Yamamichi, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 23/552 (2006.01); H01L 23/29 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 23/295 (2013.01); H01L 23/552 (2013.01); H01L 24/34 (2013.01); H01L 24/97 (2013.01); H01L 24/06 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/85 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/06155 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/4824 (2013.01); H01L 2224/4826 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73203 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8592 (2013.01); H01L 2224/97 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A yield of semiconductor devices having a magnetic shield is enhanced. A magnetic shield member SIE has a first shield member SIEand a second shield member SIE. The first shield member SIEhas a first facing region FPfacing a first surface of a semiconductor chip SC. The second shield member SIEhas a second facing region FPfacing a second surface of the semiconductor chip SC. A resin layer RLhas a portion thereof making contact with the first shield member SIE, and has another portion thereof making contact with the second shield member SIE. Then, the first shield member SIEand the second shield member SIEare magnetically coupled via the resin layer RLor directly. The first shield member SIEand the second shield member SIEcover a magnetic memory cell MR in plan view.


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