The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jan. 17, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Kyung Wook Hwang, Hwaseong-si, KR;
Jung Sub Kim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/50 (2010.01); H01L 33/12 (2010.01); H01L 33/10 (2010.01); H01L 33/26 (2010.01); H01L 33/32 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/50 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/26 (2013.01); H01L 33/32 (2013.01); H01L 33/507 (2013.01);
Abstract
A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.