The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Jun. 23, 2011
Applicants:

Tae Hun Kim, Gyunggi-do, KR;

Gi Bum Kim, Gyunggi-do, KR;

Won Goo Hur, Incheon, KR;

Young Sun Kim, Gyunggi-do, KR;

Ki Sung Kim, Gyunggi-do, KR;

Inventors:

Tae Hun Kim, Gyunggi-do, KR;

Gi Bum Kim, Gyunggi-do, KR;

Won Goo Hur, Incheon, KR;

Young Sun Kim, Gyunggi-do, KR;

Ki Sung Kim, Gyunggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/40 (2006.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/0079 (2013.01); H01L 2933/0091 (2013.01);
Abstract

Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.


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