The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Apr. 17, 2014
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Eun Deok Sim, Yongin-si, KR;
Sang Jo Kim, Gwangju, KR;
Sung Tae Kim, Seoul, KR;
Young Sun Kim, Gyeonggi-do, KR;
Seong Ju Park, Gwangju, KR;
Suk Ho Yoon, Seoul, KR;
Sang Jun Lee, Gwangju, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Abstract
A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InGaN, wherein 0≦x<y, and at least one quantum well layer made of InGaN, wherein 0<y≦1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.