The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Aug. 01, 2011
Applicants:

Isao Takahashi, Hitachi, JP;

Yoshinori Sunaga, Hitachinaka, JP;

Hidetaka Kawauchi, Hitachi, JP;

Inventors:

Isao Takahashi, Hitachi, JP;

Yoshinori Sunaga, Hitachinaka, JP;

Hidetaka Kawauchi, Hitachi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/118 (2006.01); G01T 1/24 (2006.01);
U.S. Cl.
CPC ...
H01L 31/118 (2013.01); G01T 1/241 (2013.01); G01T 1/243 (2013.01);
Abstract

An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein. The radioactive ray detector, comprises a substrate, a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning the substrate therebetween, a first electrode pattern, which is electrically connected with the first semiconductor element on a surface facing to an opposite side of the substrate, and a second electrode pattern, which is electrically connected with the second semiconductor element on a surface facing to an opposite side of the substrate, wherein the first electrode pattern and the second electrode pattern are arranged not to overlap with each other, when seeing through the substrate in a direction of thickness thereof.


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