The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jan. 30, 2013
Kyocera Corporation, Kyoto-shi, Kyoto, JP;
Shiro Miyazaki, Kyoto, JP;
Tomofumi Honjo, Higashiomi, JP;
Koji Niwa, Souraku-gun, JP;
Hironori Kii, Kizugawa, JP;
Shigeo Aono, Souraku-gun, JP;
Yosuke Nishioka, Souraku-gun, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate () formed from silicon; a first film-formation step for the formation of a first protective film () by deposition of aluminum oxide on a top surface (B) of the substrate () using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film () by deposition of aluminum oxide on the first protective film () using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.