The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Nov. 08, 2012
Applicant:
Tamura Corporation, Tokyo, JP;
Inventors:
Masaru Takizawa, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
Assignee:
TAMURA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/267 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02414 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66969 (2013.01); H01L 29/0619 (2013.01); H01L 29/0661 (2013.01); H01L 29/47 (2013.01);
Abstract
A Schottky barrier diode is provided with: an n-type semiconductor layer including GaO-based compound semiconductors with n-type conductivity; and a Schottky electrode layer which is in Schottky-contact with the n-type semiconductor layer. An n-type semiconductor layer, which has a relatively low electron carrier concentration and is brought into Schottky-contact with the Schottky electrode layer, and an nsemiconductor layer, which has a higher electron carrier concentration than the n semiconductor layer, are formed in the n-type semiconductor layer.