The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Mar. 29, 2012
Qiang Cui, Orlando, FL (US);
Juin Jei Liou, Oviedo, FL (US);
Qiang Cui, Orlando, FL (US);
Juin Jei Liou, Oviedo, FL (US);
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Abstract
An integrated electrostatic discharge (ESD) shunting circuit includes a III-V semiconductor layer, and a first drain-less high electron mobility transistor (HEMT) or a metal-semiconductor FET (MESFET) transistor having a first gate and at least a second drain-less HEMT or MESFET having a second gate formed in the substrate. The HEMTs or MESFETs include a donor layer on the semiconductor layer, no drains, and a source including an ohmic contact layer on the donor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile