The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Feb. 15, 2013
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Tsuyoshi Hosono, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 21/28273 (2013.01); H01L 27/11524 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract
A semiconductor device includes a gate insulating film formed on the semiconductor substrate; a floating gate formed on the gate insulating film; a control gate formed on the floating gate and has a side coplanar with a side of the floating gate; a tunnel diffusion layer facing a portion of the floating gate; and a tunnel window formed in a portion of the gate insulating film between the floating gate and the tunnel diffusion layer, the tunnel window being formed to be thinner than a remaining peripheral portion of the gate insulating film.