The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Aug. 14, 2012
Applicants:
Andrew Wood, St. Jakob im Rosental, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Markus Zundel, Egmating, DE;
Inventors:
Andrew Wood, St. Jakob im Rosental, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Markus Zundel, Egmating, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/0882 (2013.01); H01L 29/0886 (2013.01); H01L 29/66719 (2013.01); H01L 29/66734 (2013.01); H01L 29/0878 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01);
Abstract
A semiconductor component is produced by forming a trench in a semiconductor region. The trench has an upper trench region and a lower trench region. The upper trench region is wider than the lower trench region such that a step is formed in the semiconductor region. A dopant is introduced into the step to form a locally delimited dopant region in the semiconductor region.