The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Feb. 14, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Satoshi Morishita, Osaka, JP;
Koichiro Fujita, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
A nitride semiconductor device includes a substrate, a nitride semiconductor laminate, and an ohmic electrode of TiAl-based material. The nitride semiconductor laminate has a first nitride semiconductor layer on the substrate, and a second nitride semiconductor layer forming a heterointerface with the first nitride semiconductor layer. The nitride semiconductor device has an oxygen concentration profile in a depth direction of the device across between the ohmic electrode and the nitride semiconductor laminate. The profile has a first oxygen concentration peak near an interface between the ohmic electrode and the nitride semiconductor laminate in a region, of the nitride semiconductor laminate, that is on a substrate side of the interface, and a second oxygen concentration peak having an oxygen concentration of 3×10cm-1.2×10cmin a position deeper than that of the first oxygen concentration peak.