The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Mar. 05, 2014
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
June Sik Kwak, Ansan-si, KR;
Young Do Jong, Ansan-si, KR;
Ho Young Cha, Seoul, KR;
Bong Ryeol Park, Goyang-si, KR;
Jae Gil Lee, Daejeon, KR;
Kwan Hyun Lee, Ansan-si, KR;
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Abstract
Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.