The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jan. 17, 2014
Fujifilm Corporation, Minato-Ku, Tokyo, JP;
Fumihiko Mochizuki, Kanagawa, JP;
Masahiro Takata, Kanagawa, JP;
Masashi Ono, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0<Z<L=8×10×T−0.0092×T+3.6×T−468±0.1 is satisfied.