The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Oct. 12, 2012
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong Province, CN;
Yangling Cheng, Shenzhen, CN;
Hsiangchih Hsiao, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong Province, CN;
Abstract
The present invention provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured with same. The method includes (1) providing a substrate; (2) forming a first metal layer on the substrate and applying a masking operation to form a gate terminal; (3) forming a gate insulation layer on the gate terminal; (4) forming an oxide semiconductor layer on the gate insulation layer and forming a second metal layer on the oxide semiconductor layer, wherein the second metal layer includes a titanium layer formed on the oxide semiconductor layer and a copper layer formed on the titanium layer and is subjected to a masking operation to form a data line and source/drain terminal; and (5) forming a transparent conductive layer on the second metal layer and applying a masking operation to patternize the transparent conductive layer to form the thin-film transistor.