The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Dec. 06, 2006
Shankar Sinha, Redwood Shores, CA (US);
Yi He, Fremont, CA (US);
Zhizheng Liu, San Jose, CA (US);
Ming-sang Kwan, San Leandro, CA (US);
Shankar Sinha, Redwood Shores, CA (US);
Yi He, Fremont, CA (US);
Zhizheng Liu, San Jose, CA (US);
Ming-Sang Kwan, San Leandro, CA (US);
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Abstract
One embodiment of the present invention relates to a memory cell. The memory cell comprises a substrate and a stacked gate structure disposed on the substrate, wherein the stacked gate structure comprises a charge trapping dielectric layer that is adapted to store at least one bit of data. The memory cell further includes a source and drain in the substrate, wherein the source and drain are disposed at opposite sides of the stacked gate structure. A barrier region is disposed substantially beneath the source or the drain and comprises an inert species. Other embodiments are also disclosed.