The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Feb. 14, 2014
Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Yi Chang, Hsinchu, TW;

Chien-I Kuo, Hsinchu, TW;

Heng-Tung Hsu, Chung-Li, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42316 (2013.01); H01L 21/28 (2013.01); H01L 21/28587 (2013.01); H01L 29/4232 (2013.01); H01L 29/66431 (2013.01); H01L 29/778 (2013.01);
Abstract

The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.


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