The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Nov. 30, 2012
Applicants:

Samsung Display Co., Ltd., Youngin, Gyeonggi-Do, KR;

Industry Academy Cooperation Foundation of Kyunghee University, Youngin-si, Gyeonggi-do, KR;

Inventors:

Tae-Woong Kim, Yongin, KR;

Jin Jang, Seoul, KR;

Christophe Vincent Avis, Seoul, KR;

Youn-Goo Kim, Seoul, KR;

Assignees:

Samsung Display Co., Ltd., Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do, KR;

INDUSTRY ACADEMY COOPERATION FOUNDATION OF KYUNGHEE UNIVERSITY, Seocheon-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01);
Abstract

Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.


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