The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Sep. 26, 2012
Walt A. DE Heer, Atlanta, GA (US);
Walt A. de Heer, Atlanta, GA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
A transistor includes a silicon carbide crystal () having a silicon terminated face (). A semiconducting-type graphene layer () is bonded to the silicon terminated face (). A first semimetallic-type graphene layer () is contiguous with a first portion of the semiconducting-type graphene layer (). A second semimetallic-type graphene layer () is contiguous with a second portion of the semiconducting-type graphene layer () that is spaced apart from the first portion. An insulator layer () is disposed on a portion of the semiconducting-type graphene layer (). A gate conductive layer () disposed on the insulator layer () and spaced apart from the semiconducting-type graphene layer ().