The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Sep. 05, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Youn Sung Choi, Plano, TX (US);
Greg Charles Baldwin, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/823807 (2013.01); H01L 27/0203 (2013.01); H01L 27/092 (2013.01); H01L 29/1033 (2013.01); H01L 29/7843 (2013.01);
Abstract
An integrated circuit with DSL borders perpendicular to the transistor gates primarily inside the nwell and with DSL borders parallel to the transistor gates primarily outside the nwell. A method for forming an integrated circuit with DSL borders perpendicular to the tranistor gates primarily inside the nwell and with DSL borders parallel to the transistor gates primarily outside the nwell.