The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Dec. 23, 2008
Applicants:

Do-hyun Kwon, Suwon-si, KR;

Il-jeong Lee, Suwon-si, KR;

Choong-youl Im, Suwon-si, KR;

Dae-hyun NO, Suwon-si, KR;

Jong-mo Yeo, Suwon-si, KR;

Cheol-ho Yu, Suwon-si, KR;

Inventors:

Do-Hyun Kwon, Suwon-si, KR;

Il-Jeong Lee, Suwon-si, KR;

Choong-Youl Im, Suwon-si, KR;

Dae-Hyun No, Suwon-si, KR;

Jong-Mo Yeo, Suwon-si, KR;

Cheol-Ho Yu, Suwon-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01); H01L 27/32 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01); H01L 29/4908 (2013.01); H01L 2227/323 (2013.01);
Abstract

A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode.


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