The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Mar. 08, 2013
Applicant:
Ki Jun Yun, Yongin-si, KR;
Inventor:
Ki Jun Yun, Yongin-si, KR;
Assignee:
Dongbu Hitek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/488 (2006.01); H01L 21/28 (2006.01); B81C 1/00 (2006.01); H01H 1/00 (2006.01); H01H 35/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/488 (2013.01); B81C 1/00015 (2013.01); H01H 1/0036 (2013.01); H01L 21/28 (2013.01); H01H 35/02 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a lower electrode pattern on a substrate, forming a first insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first insulating layer, forming an etch blocking spacer at a side of the upper electrode pattern, forming a second insulating layer on the upper electrode pattern, etching the second insulating layer to form a cavity which exposes the etch blocking spacer, and forming a contact ball in the cavity.