The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jul. 03, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Chikara Watatani, Tokyo, JP;
Masato Negishi, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes: forming electrodes on a first major surface of a semiconductor substrate having first and second major surfaces facing in opposite directions; and forming a cleavage-inducing pattern on the first major surface of the semiconductor substrate. The cleavage-inducing pattern extends over a target cleavage position located between the electrodes, has a recess extending over the target cleavage position, and is made of a material different from the material of the semiconductor substrate. The method includes forming a scribed groove in the second major surface of the semiconductor substrate and in a position facing the target cleavage position; and cleaving the semiconductor substrate having the scribed groove and the cleavage-inducing pattern by applying pressure, through a cleaving blade, to the first major surface of the semiconductor substrate.