The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Aug. 06, 2014
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Euibok Lee, Seoul, KR;
Jongmin Baek, Suwon-si, KR;
Dohyoung Kim, Hwaseong-si, KR;
Tsukasa Matsuda, Seongnam-si, KR;
Youngwoo Cho, Suwon-si, KR;
Jongseo Hong, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor device may include: forming an interlayer insulating layer having openings on a substrate; forming a metal layer in the openings and on the interlayer insulating layer, the metal layer including a sidewall portion on a sidewall of each of the openings and a bottom portion on a bottom surface of each of the openings, wherein the bottom portion is thicker than the sidewall portion; reflowing the metal layer to form metal patterns in the openings, the metal patterns having top surfaces at a level lower than a topmost surface of the interlayer insulating layer; and/or forming capping patterns covering the metal patterns in the openings.