The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jan. 23, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Wei Yu, Shenzhen, CN;
Kuancheng Lee, Shenzhen, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
A method of defining poly-silicon growth direction includes Step, forming a buffer layer on a substrate; Step, forming a regular graphene array; Step, forming an amorphous silicon thin film on the buffer layer, which the regular graphene array has formed thereon; and Step, transferring the amorphous silicon thin film into poly-silicon with an excimer laser anneal process. The growth direction of the poly-silicon as being formed can be controlled according to the present method of defining poly-silicon growth direction. Accordingly, the grain size of the poly-silicon can be raised.