The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jul. 28, 2009
Alexandre M. Bratkovski, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Shih-yuan Wang, Palo Alto, CA (US);
Michael Stuke, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Michael Stuke, Palo Alto, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.