The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Jun. 02, 2014
Applicant:
Jong-sang Choi, Seoul, KR;
Inventor:
Jong-Sang Choi, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/413 (2006.01); G11C 5/14 (2006.01); G11C 7/12 (2006.01); G11C 11/419 (2006.01); G11C 11/4074 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/12 (2013.01); G11C 5/147 (2013.01); G11C 11/4074 (2013.01);
Abstract
A static random access memory (SRAM) device is provided. A memory cell is supplied with a first driving voltage. A bit line pair is connected to the memory cell. A sense amplifier is connected to the bit line pair. The sense amplifier is supplied with a second driving voltage that is lower than the first driving voltage. A control logic selects a pre-charge voltage from the first and second driving voltages, pre-charges the bit line pair to the pre-charge voltage and adjusts the pre-charged voltage to a target voltage.