The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Oct. 20, 2008
Vladimir Korobochko, Goettingen, DE;
Juergen Kleinschmidt, Goettingen, DE;
Vladimir Korobochko, Goettingen, DE;
Juergen Kleinschmidt, Goettingen, DE;
USHIO Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma) to the secondary source location (output opening () of the source module ()/intermediate focus plane ()), is met according to the invention in that the plasma () is formed as a volume emitter for direct illumination of the output opening () without collector optics (), and the transverse dimension (d) of the plasma () is greater than the diameter (D) of the output opening (), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma () and the output opening () and on the numerical aperture (NA) of the illumination system downstream.