The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Apr. 06, 2012
Applicants:

Masanao Natsumeda, Tokyo, JP;

Masao Imai, Tokyo, JP;

Naofumi Suzuki, Tokyo, JP;

Mizuho Tomiyama, Tokyo, JP;

Shin Tominaga, Tokyo, JP;

Yuji Ohno, Tokyo, JP;

Inventors:

Masanao Natsumeda, Tokyo, JP;

Masao Imai, Tokyo, JP;

Naofumi Suzuki, Tokyo, JP;

Mizuho Tomiyama, Tokyo, JP;

Shin Tominaga, Tokyo, JP;

Yuji Ohno, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 21/20 (2006.01); G02B 5/00 (2006.01); G01N 21/64 (2006.01); G01N 21/552 (2014.01); F21V 8/00 (2006.01); G02F 1/1335 (2006.01);
U.S. Cl.
CPC ...
G02B 5/008 (2013.01); G01N 21/553 (2013.01); G01N 21/648 (2013.01); G02B 6/005 (2013.01); G03B 21/204 (2013.01); G03B 21/2033 (2013.01); G02F 1/133602 (2013.01); G02F 1/133606 (2013.01); G03B 21/2073 (2013.01);
Abstract

An optical element that can reduce the etendue of emitted light emitted from the optical element without having depend on the etendue of light-emitting elements is provided with a plasmon-excitation layer that is interposed between two layers having dielectric properties wherein, taking the plasmon-excitation layer as a border, the effective dielectric constant of the emission-side portion that is the emission layer side is higher than the effective dielectric constant of the incident-side portion that is the side of a carrier-generating layer, and the dielectric constant between the plasmon-excitation layer and the carrier-generating layer is higher than the dielectric constant between the carrier-generating layer and the light-incident surface.


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