The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Dec. 09, 2013
International Business Machines Corporation, Armonk, NY (US);
Terence L. Kane, Wappingers Falls, NY (US);
Matthew F. Stanton, Salt Point, NY (US);
Michael P. Tenney, Poughkeepsie, NY (US);
GLOBALFOUNDRIES U.S. 2 LLC, Hopewell Junction, NY (US);
Abstract
A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure may include exposing first and second contact regions associated with the discrete device, coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer, and coupling the high-frequency impedance probe to a first and a second atomic force probe tip. Using an atomic force microscope, the first atomic force probe tip is coupled to the exposed first contact region and the second atomic force probe tip is coupled to the exposed second contact region. The C-V characteristic for the discrete device is then measured on the impedance analyzer, whereby the impedance analyzer applies an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.