The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
May. 23, 2011
Maximilian Fleischer, Höhenkirchen, DE;
Oliver Freudenberg, München, DE;
Harry Hedler, Germering, DE;
Markus Schieber, München, DE;
Manfred Schreiner, Gauting, DE;
Karl Weidner, München, DE;
Kerstin Wiesner, Putzbrunn, DE;
Jörg Zapf, München, DE;
Maximilian Fleischer, Höhenkirchen, DE;
Oliver Freudenberg, München, DE;
Harry Hedler, Germering, DE;
Markus Schieber, München, DE;
Manfred Schreiner, Gauting, DE;
Karl Weidner, München, DE;
Kerstin Wiesner, Putzbrunn, DE;
Jörg Zapf, München, DE;
SIEMENS AKTIENGESELLSCHAFT, Munich, DE;
Abstract
At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.