The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Oct. 19, 2010
Applicants:

John Corson, Mountain View, CA (US);

Alex Austin, Santa Clara, CA (US);

Ron Rulkens, Milpitas, CA (US);

Jochen Titus, Sunnyvale, CA (US);

Robert Tas, Aromas, CA (US);

Paul Shufflebotham, San Jose, CA (US);

Daniel R. Juliano, Santa Clara, CA (US);

Neil Mackie, Fremont, CA (US);

Inventors:

John Corson, Mountain View, CA (US);

Alex Austin, Santa Clara, CA (US);

Ron Rulkens, Milpitas, CA (US);

Jochen Titus, Sunnyvale, CA (US);

Robert Tas, Aromas, CA (US);

Paul Shufflebotham, San Jose, CA (US);

Daniel R. Juliano, Santa Clara, CA (US);

Neil Mackie, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/14 (2006.01); C23C 14/06 (2006.01); C23C 14/56 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0623 (2013.01); C23C 14/14 (2013.01); C23C 14/3464 (2013.01); C23C 14/568 (2013.01);
Abstract

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)≦0.3, and where the content is measured in atomic percent.


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