The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 26, 2012
Takashi Kondo, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Fumio Koyama, Tokyo, JP;
Takashi Kondo, Kanagawa, JP;
Hideo Nakayama, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Fumio Koyama, Tokyo, JP;
FUJI XEROX CO., LTD., Tokyo, JP;
TOKYO INSTITUTE OF TECHNOLOGY, Tokyo, JP;
Abstract
A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.