The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 21, 2010
Hiroyuki Yamaguchi, Fukushima, JP;
Hiroshi Horiuchi, Fukushima, JP;
Kenichi Kawase, Fukushima, JP;
Tadahiko Kubota, Kanagawa, JP;
Hideki Nakai, Fukushima, JP;
Takakazu Hirose, Fukushima, JP;
Hiroyuki Yamaguchi, Fukushima, JP;
Hiroshi Horiuchi, Fukushima, JP;
Kenichi Kawase, Fukushima, JP;
Tadahiko Kubota, Kanagawa, JP;
Hideki Nakai, Fukushima, JP;
Takakazu Hirose, Fukushima, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
An anode in which an anode active material layer is arranged on an anode current collector. The anode active material layer includes anode active material particles made of an anode active material including at least one of silicon and tin as an element. An oxide-containing film including an oxide of at least one kind selected from the group consisting of silicon, germanium and tin is formed in a region in contact with an electrolytic solution of the surface of each anode active material particle by a liquid-phase method such as a liquid-phase deposition method. The region in contact with the electrolytic solution of the surface of each anode active material particle is covered with the oxide-containing film, to thereby improve the chemical stability of the anode and the charge-discharge efficiency. The thickness of the oxide-containing film is preferably within a range from 0.1 nm to 500 nm both inclusive.