The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Jul. 17, 2012
Applicants:

Sang-eun Park, Yongin-si, KR;

Young-ugk Kim, Yongin-si, KR;

Inventors:

Sang-Eun Park, Yongin-si, KR;

Young-Ugk Kim, Yongin-si, KR;

Assignee:

Samsung SDI Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 4/13 (2010.01); H01M 4/04 (2006.01); H01M 4/36 (2006.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/0471 (2013.01); H01M 4/049 (2013.01); H01M 4/364 (2013.01); H01M 4/483 (2013.01); H01M 10/0525 (2013.01); Y02E 60/122 (2013.01);
Abstract

According to an embodiment of the present invention, a negative active material for a rechargeable lithium battery includes silicon oxide particles represented by SiO(where 0<x<2) in which an atom % of a silicon phase decreases in a concentration gradient according to a depth from the surface of each particle to the center of the particle, and has an atom % of an O phase that increases in a concentration gradient. In the atom % concentration graph of the silicon (Si) phase according to the depth, the integral value of the atom % concentration of the silicon (Si) phase from the surface (where the depth is 0) to a depth where the concentration of the silicon (Si) phase is 55 atom % is about 5000 to about 40000 nm·atom %.


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