The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Jun. 29, 2009
Applicants:

Masayoshi Kotake, Chiba, JP;

Masanori Kasai, Tokyo, JP;

Hisatomo Yonehara, Sakura, JP;

Kiyofumi Takano, Chiba, JP;

Inventors:

Masayoshi Kotake, Chiba, JP;

Masanori Kasai, Tokyo, JP;

Hisatomo Yonehara, Sakura, JP;

Kiyofumi Takano, Chiba, JP;

Assignee:

DIC Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); H01L 51/0003 (2013.01); H01L 51/0566 (2013.01); H01L 51/0007 (2013.01); H01L 51/0545 (2013.01);
Abstract

The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer (d) contains a fluorine-based compound (surfactant), and, secondly, a method for producing an organic transistor comprising a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, the method comprising: a step in which the organic semiconductor layer (d) is formed on the insulating layer (c) by printing or coating an organic semiconductor solution containing a fluorine-based surfactant; or a step in which the insulating layer (d) is formed on the organic semiconductor layer (d) containing a fluorine-based surfactant by printing or coating.


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