The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Oct. 11, 2011
Rongtao LU, Lawrence, KS (US);
Judy Zhihong Wu, Lawrence, KS (US);
Rongtao Lu, Lawrence, KS (US);
Judy Zhihong Wu, Lawrence, KS (US);
THE UNIVERSITY OF KANSAS, Lawrence, KS (US);
Abstract
A high-sensitivity detector for opto-electronic detection using multiwall carbon nanotubes (MWCNTs) is provided. More specifically, multiwall carbon nanotube films demonstrate an infrared bolometric photoresponse higher than SWCNT films at room temperature. The observed D* exceeding 3.3×10cm Hz/W with MWCNT-film bolometers and can be further improved to over 1×10cm Hz/W by adding graphene flakes. The response time of about 1-2 milliseconds with MWCNT bolometers is more than an order of magnitude shorter than that of SWCNT bolometers. For individual MWCNTs with specially designed asymmetric Schottky contacts, one on the sidewall and the other covering the end, the photocurrent has been efficiently harvested and provides a higher detectivity of 6.2×10cm·Hz/W at room temperature, which is one order of magnitude higher than the convectional VOdetector and makes MWCNT competitive for practical optoelectronic detections over infrared and even longer wavelength range.