The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 06, 2014
International Business Machines Corporation, Armonk, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Somers, NY (US);
Chung H. Lam, Peekskill, NY (US);
Hsiang-Lan Lung, Elmsford, NY (US);
Eric A. Joseph, White Plains, NY (US);
Alejandro G. Schrott, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory cell and a method of making the same, that includes insulating material deposited on a substrate, a bottom electrode formed within the insulating material, a plurality of insulating layers deposited above the bottom electrode and at least one of which acts as an intermediate insulating layer. A via is defined in the insulating layers above the intermediate insulating layer. A channel is created for etch with a sacrificial spacer. A pore is defined in the intermediate insulating layer. All insulating layers above the intermediate insulating layer are removed, and the entirety of the remaining pore is filled with phase change material. An upper electrode is formed above the phase change material.