The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 18, 2008
Sang Won Kang, Suwon, KR;
Seong Ju Park, Gwangju, KR;
Min Ki Kwon, Gwangju, KR;
Sang Jun Lee, Gwangju, KR;
Joo Young Cho, Gwangju, KR;
Yong Chun Kim, Seongnam, KR;
Sang Heon Han, Suwon, KR;
Dong Ju Lee, Suwon, KR;
Jeong Tak OH, Yongin, KR;
Je Won Kim, Seoul, KR;
Sang Won Kang, Suwon, KR;
Seong Ju Park, Gwangju, KR;
Min Ki Kwon, Gwangju, KR;
Sang Jun Lee, Gwangju, KR;
Joo Young Cho, Gwangju, KR;
Yong Chun Kim, Seongnam, KR;
Sang Heon Han, Suwon, KR;
Dong Ju Lee, Suwon, KR;
Jeong Tak Oh, Yongin, KR;
Je Won Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Gwangju Institute of Science and Technology, Gwangju, KR;
Abstract
There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.