The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Jun. 20, 2013
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Christophe Kopp, Fontanil-Cornillon, FR;
Jean-Marc Fedeli, Saint-Egreve, FR;
Sylvie Menezo, Voiron, FR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/105 (2006.01); H01L 31/0352 (2006.01); H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 31/035281 (2013.01); H01L 31/0336 (2013.01); Y02E 10/50 (2013.01);
Abstract
A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.