The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 09, 2011
Rui Q. Yang, Norman, OK (US);
Zhaobing Tian, Norman, OK (US);
Tetsuya D. Mishima, Norman, OK (US);
Michael B. Santos, Norman, OK (US);
Matthew B. Johnson, Norman, OK (US);
John F. Klem, Albuquerque, NM (US);
Rui Q. Yang, Norman, OK (US);
Zhaobing Tian, Norman, OK (US);
Tetsuya D. Mishima, Norman, OK (US);
Michael B. Santos, Norman, OK (US);
Matthew B. Johnson, Norman, OK (US);
John F. Klem, Albuquerque, NM (US);
Board of Regents University of Oklahoma, Norman, OK (US);
Abstract
A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.